STT7P2UH7 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET P-CH 20V 7A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
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Technische Details STT7P2UH7 STMicroelectronics
Description: MOSFET P-CH 20V 7A SOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 22.5mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 1.6W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-6, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V.
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STT7P2UH7 | Hersteller : STMicroelectronics |
MOSFET P-channel 20 V, 0.0195 Ohm typ., 7 A STripFET H7 Power MOSFET in a SOT23-6L package |
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