STTH1210G STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE GEN PURP 1KV 12A D2PAK
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 12A
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Technische Details STTH1210G STMicroelectronics
Description: DIODE GEN PURP 1KV 12A D2PAK, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Obsolete, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: D2PAK, Current - Average Rectified (Io): 12A, Technology: Standard, Reverse Recovery Time (trr): 90 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.