STU16N65M2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.68 EUR |
| 10+ | 2.73 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2.05 EUR |
| 1000+ | 1.89 EUR |
| 3000+ | 1.87 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details STU16N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 11A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V.
Weitere Produktangebote STU16N65M2 nach Preis ab 2.15 EUR bis 6.03 EUR
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STU16N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 11A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V |
auf Bestellung 5988 Stücke: Lieferzeit 10-14 Tag (e) |
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| STU16N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; 650V; 11A; 110W; IPAK,TO251 Type of transistor: N-MOSFET Technology: MDmesh™ M2 Drain-source voltage: 650V Drain current: 11A Power dissipation: 110W Case: IPAK; TO251 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Kind of channel: enhancement Gate charge: 19.5nC |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 75 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STU16N65M2 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Description: MOSFET N-CH 650V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.03 EUR |
| 10+ | 3.9 EUR |
| 75+ | 2.81 EUR |
| 150+ | 2.53 EUR |
| 525+ | 2.15 EUR |
| STU16N65M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; 650V; 11A; 110W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: IPAK; TO251
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 19.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; 650V; 11A; 110W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: IPAK; TO251
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 19.5nC
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)