STU1HN60K3 STMicroelectronics
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Technische Details STU1HN60K3 STMicroelectronics
Description: MOSFET N-CH 600V 1.2A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-251 (IPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V.
Weitere Produktangebote STU1HN60K3 nach Preis ab 0.27 EUR bis 0.8 EUR
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| STU1HN60K3 | Hersteller : STMicroelectronics |
 STU1HN60K3 THT N channel transistors |
auf Bestellung 89 Stücke: Lieferzeit 7-14 Tag (e) |
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STU1HN60K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 1.2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-251 (IPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 50 V |
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