STU2LN60K3

STU2LN60K3 STMicroelectronics


std2ln60k3-955586.pdf Hersteller: STMicroelectronics
MOSFET N-Ch 600 V 4 Ohm 2 A SuperMESH3
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18+2.91 EUR
20+ 2.63 EUR
100+ 2.04 EUR
500+ 1.68 EUR
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Technische Details STU2LN60K3 STMicroelectronics

Description: MOSFET N CH 600V 2A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-251 (IPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V.

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STU2LN60K3 STU2LN60K3 Hersteller : STMicroelectronics en.DM00061168.pdf Description: MOSFET N CH 600V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
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