STU2NK100Z STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 1000V 1.85A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.75 EUR |
| 75+ | 6.15 EUR |
| 150+ | 5.27 EUR |
| 525+ | 4.69 EUR |
| 1050+ | 4.01 EUR |
| 2025+ | 3.78 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STU2NK100Z STMicroelectronics
Description: MOSFET N-CH 1000V 1.85A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V.
Weitere Produktangebote STU2NK100Z nach Preis ab 1.19 EUR bis 7.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STU2NK100Z | Hersteller : STMicroelectronics |
MOSFET N-Ch, 1000V-6.25ohms Zener SuprMESH 1.85A |
auf Bestellung 946 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| STU2NK100Z | Hersteller : ST |
Transistor N-Channel MOSFET; 1000V; 30V; 8,5Ohm; 1,85A; 70W; -55°C ~ 150°C; STU2NK100Z TSTU2NK100Z Anzahl je Verpackung: 25 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
 |
STU2NK100Z | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; IPAK Mounting: THT Case: IPAK Drain-source voltage: 1kV Drain current: 1.16A On-state resistance: 8.5Ω Type of transistor: N-MOSFET Power dissipation: 70W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
STU2NK100Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1KV 1.85A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
| STU2NK100Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1KV 1.85A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
STU2NK100Z | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 1.16A; 70W; IPAK Mounting: THT Case: IPAK Drain-source voltage: 1kV Drain current: 1.16A On-state resistance: 8.5Ω Type of transistor: N-MOSFET Power dissipation: 70W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate Technology: SuperMesh™ Kind of channel: enhanced Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |