STU2NK100Z STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.67 EUR |
| 10+ | 1.23 EUR |
| 100+ | 1.13 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.01 EUR |
| 3000+ | 1 EUR |
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Technische Details STU2NK100Z STMicroelectronics
Description: MOSFET N-CH 1000V 1.85A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V.
Weitere Produktangebote STU2NK100Z nach Preis ab 1.3 EUR bis 3.81 EUR
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STU2NK100Z | STMicroelectronics |
 Description: MOSFET N-CH 1000V 1.85A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V |
auf Bestellung 952 Stücke: Lieferzeit 10-14 Tag (e) |
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| STU2NK100Z | ST |
Transistor N-Channel MOSFET; 1000V; 30V; 8,5Ohm; 1,85A; 70W; -55°C ~ 150°C; STU2NK100Z TSTU2NK100Z Anzahl je Verpackung: 25 Stücke |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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| STU2NK100Z |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 1000V 1.85A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
Description: MOSFET N-CH 1000V 1.85A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
auf Bestellung 952 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.81 EUR |
| 75+ | 1.71 EUR |
| 150+ | 1.55 EUR |
| 525+ | 1.3 EUR |
| STU2NK100Z |
|
Hersteller: ST
Transistor N-Channel MOSFET; 1000V; 30V; 8,5Ohm; 1,85A; 70W; -55°C ~ 150°C; STU2NK100Z TSTU2NK100Z
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 1000V; 30V; 8,5Ohm; 1,85A; 70W; -55°C ~ 150°C; STU2NK100Z TSTU2NK100Z
Anzahl je Verpackung: 25 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 1.5 EUR |