STU3LN80K5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
Description: MOSFET N-CHANNEL 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
auf Bestellung 2757 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.51 EUR |
10+ | 3.14 EUR |
100+ | 2.45 EUR |
500+ | 2.02 EUR |
1000+ | 1.6 EUR |
2000+ | 1.49 EUR |
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Technische Details STU3LN80K5 STMicroelectronics
Description: MOSFET N-CHANNEL 800V 2A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: IPAK (TO-251), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V.
Weitere Produktangebote STU3LN80K5 nach Preis ab 2.12 EUR bis 3.67 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
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STU3LN80K5 | Hersteller : STMicroelectronics | MOSFET N-channel 800 V, 2.75 Ohm typ 2 A MDmesh K5 Power MOSFET in an IPAK package |
auf Bestellung 2775 Stücke: Lieferzeit 14-28 Tag (e) |
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