STU3LN80K5 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 800 V, 2.75 Ohm typ 2 A MDmesh K5 Power MOSFET in an IPAK package
auf Bestellung 2775 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.10 EUR |
| 10+ | 0.97 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.75 EUR |
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Technische Details STU3LN80K5 STMicroelectronics
Description: MOSFET N-CHANNEL 800V 2A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: IPAK (TO-251), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V.
Weitere Produktangebote STU3LN80K5 nach Preis ab 0.71 EUR bis 1.14 EUR
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STU3LN80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CHANNEL 800V 2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: IPAK (TO-251) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V |
auf Bestellung 2991 Stücke: Lieferzeit 10-14 Tag (e) |
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