auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 1.25 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 0.98 EUR |
| 3000+ | 0.9 EUR |
| 6000+ | 0.84 EUR |
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Technische Details STU3N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 2.7A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V.
Weitere Produktangebote STU3N62K3 nach Preis ab 3.31 EUR bis 3.31 EUR
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STU3N62K3 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 620V 2.7A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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STU3N62K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| STU3N62K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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STU3N62K3 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 1.7A; 45W; IPAK Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 1.7A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STU3N62K3 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 1.7A; 45W; IPAK Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 1.7A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |