STU4N52K3 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK
Type of transistor: N-MOSFET
Technology: SuperMESH3™
Polarisation: unipolar
Drain-source voltage: 525V
Drain current: 2A
Power dissipation: 45W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 417 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 143+ | 0.5 EUR |
| 205+ | 0.35 EUR |
| 217+ | 0.33 EUR |
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Technische Details STU4N52K3 STMicroelectronics
Description: MOSFET N-CH 525V 2.5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.25A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: I-PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 525 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 100 V.
Weitere Produktangebote STU4N52K3 nach Preis ab 0.33 EUR bis 2.09 EUR
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STU4N52K3 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 525V; 2A; 45W; IPAK Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 525V Drain current: 2A Power dissipation: 45W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 417 Stücke: Lieferzeit 7-14 Tag (e) |
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STU4N52K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 525V 2.5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.25A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: I-PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 100 V |
auf Bestellung 2513 Stücke: Lieferzeit 10-14 Tag (e) |
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STU4N52K3 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 525V 2.1 Ohm 2.5A SuperMESH 3 |
auf Bestellung 1724 Stücke: Lieferzeit 10-14 Tag (e) |
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| STU4N52K3 | Hersteller : ST |
Transistor N-Channel MOSFET; 525V; 30V; 2,6Ohm; 2,5A; 45W; -55°C ~ 150°C; STU4N52K3 TSTU4N52K3 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| STU4N52K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 525V 2.5A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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STU4N52K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 525V 2.5A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |