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STU5N62K3

STU5N62K3 STMicroelectronics

std5n62k3-1850498.pdf Hersteller: STMicroelectronics
MOSFET N-Ch 620V 1.28 Ohm 4.2A SuperMESH 3
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.90 EUR
10+2.41 EUR
100+1.92 EUR
250+1.83 EUR
500+1.60 EUR
1000+1.30 EUR
3000+1.26 EUR
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Technische Details STU5N62K3 STMicroelectronics

Description: MOSFET N-CH 620V 4.2A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.1A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-251 (IPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V.

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STU5N62K3 STU5N62K3 Hersteller : STMicroelectronics en.CD00269934.pdf Description: MOSFET N-CH 620V 4.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.1A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V
auf Bestellung 1999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.87 EUR
75+1.87 EUR
150+1.64 EUR
525+1.44 EUR
1050+1.29 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STU5N62K3 Hersteller : STMicroelectronics en.CD00269934.pdf
auf Bestellung 2975 Stücke:
Lieferzeit 21-28 Tag (e)
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