STU6N65M2 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 2845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.06 EUR |
| 10+ | 0.75 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.66 EUR |
| 3000+ | 0.62 EUR |
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Technische Details STU6N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 4A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V.
Weitere Produktangebote STU6N65M2
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STU6N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube |
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| STU6N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube |
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STU6N65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V |
Produkt ist nicht verfügbar |