STU6NF10

STU6NF10 STMicroelectronics


std6nf10-1850528.pdf Hersteller: STMicroelectronics
MOSFET N-Ch, 100V-0.22ohms 6A
auf Bestellung 2989 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
24+2.25 EUR
29+ 1.83 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 0.94 EUR
3000+ 0.89 EUR
Mindestbestellmenge: 24
Produktrezensionen
Produktbewertung abgeben

Technische Details STU6NF10 STMicroelectronics

Description: MOSFET N-CH 100V 6A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 3A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V.

Weitere Produktangebote STU6NF10

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STU6NF10 STU6NF10 Hersteller : STMicroelectronics cd0000245.pdf Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
STU6NF10 Hersteller : STMicroelectronics cd0000245.pdf Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
STU6NF10 STU6NF10 Hersteller : STMicroelectronics cd0000245.pdf Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
STU6NF10 STU6NF10 Hersteller : STMicroelectronics en.CD00002457.pdf Description: MOSFET N-CH 100V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 3A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Produkt ist nicht verfügbar