STU7LN80K5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 800V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.59 EUR |
| 75+ | 2.14 EUR |
| 150+ | 1.93 EUR |
| 525+ | 1.64 EUR |
| 1050+ | 1.52 EUR |
| 2025+ | 1.42 EUR |
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Technische Details STU7LN80K5 STMicroelectronics
Description: MOSFET N-CH 800V 5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-251 (IPAK), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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STU7LN80K5 | Hersteller : STMicroelectronics |
MOSFET PTD HIGH VOLTAGE |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |