STU7N80K5

STU7N80K5 STMicroelectronics


std7n80k5-1850598.pdf Hersteller: STMicroelectronics
MOSFET N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
auf Bestellung 1852 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.36 EUR
14+ 3.77 EUR
100+ 3.25 EUR
250+ 3.2 EUR
500+ 2.83 EUR
1000+ 2.4 EUR
3000+ 2.33 EUR
Mindestbestellmenge: 10
Produktrezensionen
Produktbewertung abgeben

Technische Details STU7N80K5 STMicroelectronics

Description: MOSFET N-CH 800V 6A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V.

Weitere Produktangebote STU7N80K5

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STU7N80K5 STU7N80K5 Hersteller : STMicroelectronics stu7n80k5.pdf Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
STU7N80K5 Hersteller : STMicroelectronics stu7n80k5.pdf Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
STU7N80K5 STU7N80K5 Hersteller : STMicroelectronics en.DM00060222.pdf Description: MOSFET N-CH 800V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
Produkt ist nicht verfügbar