STU7NM60N STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 4+ | 4.68 EUR |
| 75+ | 2.18 EUR |
| 150+ | 1.98 EUR |
| 525+ | 1.68 EUR |
| 1050+ | 1.55 EUR |
| 2025+ | 1.45 EUR |
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Technische Details STU7NM60N STMicroelectronics
Description: MOSFET N-CH 600V 5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V.
Weitere Produktangebote STU7NM60N nach Preis ab 1.5 EUR bis 4.73 EUR
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STU7NM60N | Hersteller : STMicroelectronics |
MOSFETs N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh |
auf Bestellung 1718 Stücke: Lieferzeit 10-14 Tag (e) |
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| STU7NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 45W Case: IPAK; TO251 On-state resistance: 0.9Ω Mounting: THT Kind of channel: enhancement Gate charge: 14nC |
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