STU7NM60N STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 4.44 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.37 EUR |
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Technische Details STU7NM60N STMicroelectronics
Description: MOSFET N-CH 600V 5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V.
Weitere Produktangebote STU7NM60N nach Preis ab 1.45 EUR bis 4.68 EUR
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STU7NM60N | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 5A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V |
auf Bestellung 2843 Stücke: Lieferzeit 10-14 Tag (e) |
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STU7NM60N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube |
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| STU7NM60N | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 45W Case: IPAK; TO251 On-state resistance: 0.9Ω Mounting: THT Kind of channel: enhancement Gate charge: 14nC |
Produkt ist nicht verfügbar |