STU9HN65M2 STMicroelectronics
auf Bestellung 2861 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2017+ | 0.072 EUR |
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Technische Details STU9HN65M2 STMicroelectronics
Description: MOSFET N-CH 650V 5.5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V.
Weitere Produktangebote STU9HN65M2 nach Preis ab 0.75 EUR bis 2.41 EUR
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STU9HN65M2 | Hersteller : STMicroelectronics |
 MOSFETs PTD HIGH VOLTAGE |
auf Bestellung 1699 Stücke: Lieferzeit 10-14 Tag (e) |
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STU9HN65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 5.5A 3-Pin(3+Tab) IPAK Tube |
auf Bestellung 2861 Stücke: Lieferzeit 14-21 Tag (e) |
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STU9HN65M2 Produktcode: 199737
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STU9HN65M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 5.5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V |
Produkt ist nicht verfügbar |