STU9N60M2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 5.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
auf Bestellung 1763 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.76 EUR |
| 75+ | 1.24 EUR |
| 150+ | 1.11 EUR |
| 525+ | 0.93 EUR |
| 1050+ | 0.85 EUR |
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Technische Details STU9N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 5.5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V.
Weitere Produktangebote STU9N60M2 nach Preis ab 0.73 EUR bis 2.82 EUR
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STU9N60M2 | Hersteller : STMicroelectronics |
MOSFETs N-CH 600V 0.72Ohm 5.5A MDMesh M2 |
auf Bestellung 127 Stücke: Lieferzeit 10-14 Tag (e) |
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STU9N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK Tube |
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| STU9N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| STU9N60M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 5.5A; Idm: 22A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.5A Power dissipation: 60W Case: IPAK Gate-source voltage: ±25V On-state resistance: 780mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 10nC |
Produkt ist nicht verfügbar |