STW10N105K5 STMicroelectronics
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details STW10N105K5 STMicroelectronics
Description: MOSFET N-CH 1050V 6A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 1050 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V.
Weitere Produktangebote STW10N105K5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
STW10N105K5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 1.05KV 6A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|
| STW10N105K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 3.78A Pulsed drain current: 24A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 21.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
STW10N105K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.05KV 6A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|
 |
STW10N105K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1050V 6A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 1050 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V |
Produkt ist nicht verfügbar |
|
 |
STW10N105K5 | Hersteller : STMicroelectronics |
MOSFET N-channel 1050 V, 1 Ohm typ 6 A MDmesh K5 Power MOSFETs in TO-247 package |
Produkt ist nicht verfügbar |
|
| STW10N105K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 3.78A; Idm: 24A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 3.78A Pulsed drain current: 24A Power dissipation: 130W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 21.5nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |