STW11NK90Z STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; Idm: 36.8A; 200W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.8A
Pulsed drain current: 36.8A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 980mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.93 EUR |
| 21+ | 3.55 EUR |
| 28+ | 2.57 EUR |
| 30+ | 2.43 EUR |
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Technische Details STW11NK90Z STMicroelectronics
Description: MOSFET N-CH 900V 9.2A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 4.6A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote STW11NK90Z nach Preis ab 2.43 EUR bis 15.31 EUR
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STW11NK90Z | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5.8A; Idm: 36.8A; 200W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.8A Pulsed drain current: 36.8A Power dissipation: 200W Case: TO247 Gate-source voltage: ±30V On-state resistance: 980mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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STW11NK90Z | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 9.2A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 4.6A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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STW11NK90Z | Hersteller : STMicroelectronics |
MOSFET N Ch 900V Zener SuperMESH 9.2A |
auf Bestellung 579 Stücke: Lieferzeit 126-140 Tag (e) |
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STW11NK90Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 9.2A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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| STW11NK90Z | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 9.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |