Technische Details STW11NM80
- MOSFET N CH 800V 11A TO-247
- Transistor Type:Power MOSFET
- Transistor Polarity:N Channel
- Typ Voltage Vds:800V
- Cont Current Id:5.5A
- On State Resistance:350mohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:TO-247
- Termination Type:Through Hole
- Operating Temperature Range:-65`C to +150`C
Weitere Produktangebote STW11NM80 nach Preis ab 4 EUR bis 12.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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STW11NM80 | STMicroelectronics |
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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STW11NM80 | STMicroelectronics |
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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STW11NM80 | STMicroelectronics |
Description: MOSFET N-CH 800V 11A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
auf Bestellung 501 Stücke: Lieferzeit 10-14 Tag (e) |
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STW11NM80 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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STW11NM80 | STMicroelectronics |
MOSFETs N-Ch 800 Volt 11 Amp Power MDmesh |
auf Bestellung 806 Stücke: Lieferzeit 10-14 Tag (e) |
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| STW11NM80 | ST |
N-MOSFET 11A 800V 150W 0.4Ω STW11NM80 TSTW11NM80Anzahl je Verpackung: 2 Stücke |
auf Bestellung 49 Stücke: Lieferzeit 7-14 Tag (e) |
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| STW11NM80 |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 10.33 EUR |
| 28+ | 6.28 EUR |
| 100+ | 4.7 EUR |
| 600+ | 4.21 EUR |
| STW11NM80 |
![]() |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.35 EUR |
| 28+ | 6.15 EUR |
| 100+ | 4.55 EUR |
| 600+ | 4 EUR |
| STW11NM80 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Description: MOSFET N-CH 800V 11A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 43.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
auf Bestellung 501 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.04 EUR |
| 30+ | 6.87 EUR |
| 120+ | 5.72 EUR |
| STW11NM80 |
![]() |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.15 EUR |
| STW11NM80 |
![]() |
Hersteller: STMicroelectronics
MOSFETs N-Ch 800 Volt 11 Amp Power MDmesh
MOSFETs N-Ch 800 Volt 11 Amp Power MDmesh
auf Bestellung 806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.19 EUR |
| 10+ | 6.95 EUR |
| 100+ | 5.81 EUR |
| 600+ | 5.18 EUR |
| STW11NM80 |
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auf Bestellung 49 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 12.26 EUR |






