STW12N170K5 STMicroelectronics
auf Bestellung 1004 Stücke:
Lieferzeit 122-126 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.32 EUR |
| 10+ | 13.73 EUR |
| 25+ | 13.50 EUR |
| 100+ | 10.21 EUR |
| 250+ | 10.07 EUR |
| 600+ | 9.66 EUR |
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Technische Details STW12N170K5 STMicroelectronics
Description: MOSFET N-CH 1700V 5A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 2.9Ohm @ 2.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V.
Weitere Produktangebote STW12N170K5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STW12N170K5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 1.7KV 5A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW12N170K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 3A; Idm: 10A; 250W; TO247 Drain-source voltage: 1.7kV Drain current: 3A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: tube Gate charge: 37nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 10A Mounting: THT Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW12N170K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.7KV 5A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW12N170K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1700V 5A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2.9Ohm @ 2.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STW12N170K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 3A; Idm: 10A; 250W; TO247 Drain-source voltage: 1.7kV Drain current: 3A On-state resistance: 2.3Ω Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: tube Gate charge: 37nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 10A Mounting: THT Case: TO247 |
Produkt ist nicht verfügbar |