STW12N170K5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 1700 V, 2.3 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-247 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.12 EUR |
| 10+ | 14.14 EUR |
| 100+ | 10.01 EUR |
| 600+ | 10 EUR |
| 1200+ | 9.95 EUR |
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Technische Details STW12N170K5 STMicroelectronics
Description: MOSFET N-CH 1700V 5A TO247, Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 2.9Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STW12N170K5 nach Preis ab 9.97 EUR bis 20.34 EUR
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STW12N170K5 | STMicroelectronics |
Description: MOSFET N-CH 1700V 5A TO247 Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.9Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 526 Stücke: Lieferzeit 10-14 Tag (e) |
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| STW12N170K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1700V 5A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 1700V 5A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 526 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.34 EUR |
| 10+ | 14.1 EUR |
| 150+ | 9.97 EUR |