STW13N95K3 STMicroelectronics
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 600+ | 5.53 EUR |
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Technische Details STW13N95K3 STMicroelectronics
Description: MOSFET N-CH 950V 10A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V.
Weitere Produktangebote STW13N95K3 nach Preis ab 5.53 EUR bis 13.06 EUR
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STW13N95K3 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 950V 10A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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STW13N95K3 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 6A; Idm: 40A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 51nC Pulsed drain current: 40A |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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STW13N95K3 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 950V SuperMESH3 Zener-Protected 10A |
auf Bestellung 1107 Stücke: Lieferzeit 10-14 Tag (e) |
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STW13N95K3 Produktcode: 57538
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STW13N95K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 950V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V |
Produkt ist nicht verfügbar |