STW15N80K5 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.8A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 6.51 EUR |
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Technische Details STW15N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 14A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Weitere Produktangebote STW15N80K5 nach Preis ab 3.12 EUR bis 8.07 EUR
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STW15N80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 8.8A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.8A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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STW15N80K5 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 800V 0.3Ohm 14A pwr MDmesh K5 |
auf Bestellung 427 Stücke: Lieferzeit 10-14 Tag (e) |
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STW15N80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 14A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
auf Bestellung 586 Stücke: Lieferzeit 10-14 Tag (e) |
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STW15N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STW15N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STW15N80K5 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STW15N80K5 - Leistungs-MOSFET, n-Kanal, 800 V, 14 A, 0.3 ohm, TO-247, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 190W Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.3ohm |
auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
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STW15N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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STW15N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW15N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |