STW15N95K5

STW15N95K5 STMicroelectronics


en.DM00095839.pdf
Hersteller: STMicroelectronics
MOSFETs N-CH 950V 0.41Ohm typ. 12A MDmesh K5
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Lieferzeit 10-14 Tag (e)
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10+3.91 EUR
100+2.87 EUR
600+2.8 EUR
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Technische Details STW15N95K5 STMicroelectronics

Description: MOSFET N-CH 950V 12A TO247, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 170W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

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STW15N95K5 STW15N95K5 Hersteller : STMicroelectronics en.DM00095839.pdf Description: MOSFET N-CH 950V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STW15N95K5 STW15N95K5 Hersteller : STMicroelectronics STx15N95K5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 7.6A; 170W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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