STW15N95K5 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.4 EUR |
| 10+ | 4.99 EUR |
| 100+ | 3.67 EUR |
| 600+ | 3.64 EUR |
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Technische Details STW15N95K5 STMicroelectronics
Description: MOSFET N-CH 950V 12A TO247, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 170W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STW15N95K5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STW15N95K5 | STMicroelectronics |
 Description: MOSFET N-CH 950V 12A TO247Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STW15N95K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 7.6A; 170W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 7.6A Power dissipation: 170W Case: TO247 Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STW15N95K5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 950V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW15N95K5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 7.6A; 170W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 7.6A; 170W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH