STW18N60DM2 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 3.40 EUR |
| 32+ | 2.26 EUR |
| 34+ | 2.14 EUR |
| 510+ | 2.06 EUR |
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Technische Details STW18N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 12A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V.
Weitere Produktangebote STW18N60DM2 nach Preis ab 2.14 EUR bis 5.81 EUR
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STW18N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 90W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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STW18N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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STW18N60DM2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 0.260 Ohm typ 12 A MDmesh DM2 Power MOSFET |
auf Bestellung 547 Stücke: Lieferzeit 10-14 Tag (e) |
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STW18N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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| STW18N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |