STW18N60DM2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 packag
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.68 EUR |
| 10+ | 3.67 EUR |
| 100+ | 3 EUR |
| 600+ | 2.92 EUR |
| 1200+ | 2.68 EUR |
| 3000+ | 2.51 EUR |
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10-14 Tag (e)
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Technische Details STW18N60DM2 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247, Type of transistor: N-MOSFET, Technology: MDmesh™ DM2, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 7.6A, Power dissipation: 90W, Case: TO247, Gate-source voltage: ±25V, On-state resistance: 0.26Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Version: ESD.
Weitere Produktangebote STW18N60DM2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STW18N60DM2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.6A Power dissipation: 90W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STW18N60DM2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7.6A; 90W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 90W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)