STW18N65M5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 15A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.11 EUR |
| 30+ | 4.09 EUR |
| 120+ | 3.45 EUR |
| 510+ | 3.36 EUR |
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Technische Details STW18N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 15A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V.
Weitere Produktangebote STW18N65M5 nach Preis ab 2.89 EUR bis 6.56 EUR
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STW18N65M5 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 650V 0.198 Ohm 15A MDmesh FET |
auf Bestellung 855 Stücke: Lieferzeit 10-14 Tag (e) |
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STW18N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-247 Tube |
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| STW18N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) TO-247 Tube |
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| STW18N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 9.4A; Idm: 60A; 110W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 9.4A Power dissipation: 110W Case: TO247 Gate-source voltage: ±25V On-state resistance: 198mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 31nC Pulsed drain current: 60A Anzahl je Verpackung: 1 Stücke |
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| STW18N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 9.4A; Idm: 60A; 110W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 710V Drain current: 9.4A Power dissipation: 110W Case: TO247 Gate-source voltage: ±25V On-state resistance: 198mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 31nC Pulsed drain current: 60A |
Produkt ist nicht verfügbar |