STW20N95DK5 STMicroelectronics
auf Bestellung 534 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.73 EUR |
| 25+ | 7.29 EUR |
| 100+ | 6.79 EUR |
| 250+ | 6.64 EUR |
| 600+ | 5.53 EUR |
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Technische Details STW20N95DK5 STMicroelectronics
Description: MOSFET N-CH 950V 18A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 50.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.
Weitere Produktangebote STW20N95DK5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STW20N95DK5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 950V 18A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW20N95DK5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 950V 18A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW20N95DK5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 50.7nC Pulsed drain current: 72A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW20N95DK5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 950V 18A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 50.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STW20N95DK5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 50.7nC Pulsed drain current: 72A |
Produkt ist nicht verfügbar |