STW20N95DK5 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 600+ | 3.74 EUR |
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Technische Details STW20N95DK5 STMicroelectronics
Description: MOSFET N-CH 950V 18A TO247, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 50.7 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 100µA, Packaging: Tube.
Weitere Produktangebote STW20N95DK5 nach Preis ab 3.74 EUR bis 10.01 EUR
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STW20N95DK5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 950V 18A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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STW20N95DK5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 950V 18A TO247 Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 50.7 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 100µA Packaging: Tube |
auf Bestellung 594 Stücke: Lieferzeit 10-14 Tag (e) |
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STW20N95DK5 | Hersteller : STMicroelectronics |
MOSFETs N-channel 950 V, 275 mOhm typ., 18 A MDmesh DK5 Power MOSFET in a TO-247 package |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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| STW20N95DK5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 11A; Idm: 72A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 11A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 50.7nC Pulsed drain current: 72A |
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