STW23N85K5 STMicroelectronics
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details STW23N85K5 STMicroelectronics
Description: MOSFET N-CH 850V 19A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 275mOhm @ 9.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V.
Weitere Produktangebote STW23N85K5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STW23N85K5 | Hersteller : STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 850V; 12.4A; Idm: 250A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 850V Drain current: 12.4A Pulsed drain current: 250A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
 |
STW23N85K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 850V 19A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 275mOhm @ 9.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V |
Produkt ist nicht verfügbar |
|
| STW23N85K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 850V; 12.4A; Idm: 250A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 850V Drain current: 12.4A Pulsed drain current: 250A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 275mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |