STW24N60M2 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ || Plus; unipolar; 600V; 12A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ || Plus
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.55 EUR |
| 26+ | 3.3 EUR |
| 29+ | 2.94 EUR |
| 33+ | 2.58 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STW24N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 18A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V.
Weitere Produktangebote STW24N60M2 nach Preis ab 2.49 EUR bis 7.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STW24N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 18A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
auf Bestellung 582 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
STW24N60M2 | STMicroelectronics |
MOSFETs N-Ch 600V 0.168Ohm 18A MDmesh M2 |
auf Bestellung 676 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STW24N60M2 |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Description: MOSFET N-CH 600V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.72 EUR |
| 30+ | 3.67 EUR |
| 120+ | 2.99 EUR |
| 510+ | 2.49 EUR |
| STW24N60M2 |
![]() |
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.168Ohm 18A MDmesh M2
MOSFETs N-Ch 600V 0.168Ohm 18A MDmesh M2
auf Bestellung 676 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.41 EUR |
| 10+ | 4.84 EUR |
| 100+ | 3.53 EUR |
| 600+ | 2.95 EUR |
| 1200+ | 2.75 EUR |
| 3000+ | 2.57 EUR |



