STW24NK55Z STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 550V 23A TO247-3
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4397.5 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 285W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 11.5A, 10V
Produktrezensionen
Produktbewertung abgeben
Technische Details STW24NK55Z STMicroelectronics
Description: MOSFET N-CH 550V 23A TO247-3, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4397.5 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 550 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 285W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 11.5A, 10V.