STW25N60M2-EP STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CHANNEL 600V 18A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 188mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.95 EUR |
| 10+ | 4.18 EUR |
| 100+ | 2.98 EUR |
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Technische Details STW25N60M2-EP STMicroelectronics
Description: MOSFET N-CHANNEL 600V 18A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 188mOhm @ 9A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 100 V.
Weitere Produktangebote STW25N60M2-EP nach Preis ab 2.46 EUR bis 6.71 EUR
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| STW25N60M2-EP | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 0.175 Ohm typ 18 A MDmesh M2 EP Power MOSFET |
auf Bestellung 144 Stücke: Lieferzeit 10-14 Tag (e) |
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STW25N60M2-EP | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247 Tube |
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| STW25N60M2-EP | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247 Tube |
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| STW25N60M2-EP | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.3A Pulsed drain current: 72A Power dissipation: 150W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.175Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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| STW25N60M2-EP | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.3A; Idm: 72A; 150W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.3A Pulsed drain current: 72A Power dissipation: 150W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.175Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |