STW25N80K5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.35 EUR |
| 30+ | 9.02 EUR |
| 120+ | 7.62 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Technische Details STW25N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.
Weitere Produktangebote STW25N80K5 nach Preis ab 5.38 EUR bis 13.51 EUR
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STW25N80K5 | STMicroelectronics |
MOSFETs N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5 |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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| STW25N80K5 |
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Hersteller: STMicroelectronics
MOSFETs N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
MOSFETs N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.51 EUR |
| 10+ | 7.77 EUR |
| 100+ | 6.5 EUR |
| 600+ | 5.59 EUR |
| 1200+ | 5.38 EUR |