STW25N80K5 STMicroelectronics
auf Bestellung 468 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.38 EUR |
| 10+ | 10.17 EUR |
| 25+ | 5.32 EUR |
| 100+ | 4.91 EUR |
| 250+ | 4.84 EUR |
| 600+ | 4.82 EUR |
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Technische Details STW25N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.
Weitere Produktangebote STW25N80K5 nach Preis ab 6.4 EUR bis 10.38 EUR
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STW25N80K5 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 800V 19.5A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
auf Bestellung 263 Stücke: Lieferzeit 10-14 Tag (e) |
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STW25N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 19.5A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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| STW25N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 19.5A 3-Pin(3+Tab) TO-247 Tube |
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STW25N80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 12.3A; 250W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 12.3A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW25N80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 12.3A; 250W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 12.3A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |