STW25N80K5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 800V 19.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 590 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.55 EUR |
| 30+ | 12.32 EUR |
| 120+ | 10.56 EUR |
| 510+ | 9.39 EUR |
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Technische Details STW25N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V.
Weitere Produktangebote STW25N80K5 nach Preis ab 8.09 EUR bis 15.65 EUR
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Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 12.3A; 250W Mounting: THT Case: TO247 Kind of package: tube Features of semiconductor devices: ESD protected gate Technology: SuperMESH5™ Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 12.3A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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STW25N80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 12.3A; 250W Mounting: THT Case: TO247 Kind of package: tube Features of semiconductor devices: ESD protected gate Technology: SuperMESH5™ Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 800V Drain current: 12.3A On-state resistance: 0.19Ω Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar |
Produkt ist nicht verfügbar |