STW25N80K5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 2+ | 10.38 EUR |
| 30+ | 7.58 EUR |
| 120+ | 6.4 EUR |
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Technische Details STW25N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 19.5A TO247, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 19.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STW25N80K5 nach Preis ab 4.52 EUR bis 11.35 EUR
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STW25N80K5 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5 |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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| STW25N80K5 | Hersteller : STM |
MOSFET Transistor, N Channel, 19.5 A, 800 V, 0.19 ohm, 10 V, 4 V Група товару: Транзистори Од. вим: шт |
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STW25N80K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 12.3A; 250W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 12.3A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |