STW28N60DM2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 596 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 9.75 EUR |
| 30+ | 7.72 EUR |
| 120+ | 6.62 EUR |
| 510+ | 5.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STW28N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 21A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V.
Weitere Produktangebote STW28N60DM2 nach Preis ab 4.76 EUR bis 10.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STW28N60DM2 | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V, 0.13 Ohm typ 21 A MDmesh DM2 Power MOSFET in TO-247 package |
auf Bestellung 595 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||
 |
STW28N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||
 |
STW28N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||
| STW28N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||
| STW28N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 14A; Idm: 84A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Pulsed drain current: 84A Power dissipation: 170W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
| STW28N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 14A; Idm: 84A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 14A Pulsed drain current: 84A Power dissipation: 170W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.16Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |