STW28N65M2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 367 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.23 EUR |
| 30+ | 3.62 EUR |
| 120+ | 3.27 EUR |
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Technische Details STW28N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 20A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V.
Weitere Produktangebote STW28N65M2 nach Preis ab 3.06 EUR bis 71.5 EUR
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STW28N65M2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 650 V, 0.15 Ohm typ 20 A MDmesh M2 Power MOSFET in TO-247 package |
auf Bestellung 667 Stücke: Lieferzeit 10-14 Tag (e) |
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STW28N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 80A Power dissipation: 170W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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STW28N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 13A; Idm: 80A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 80A Power dissipation: 170W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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STW28N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW28N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |