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STW29NK50ZD STM


stw29nk50zd.pdf
Hersteller: STM
N-CHANNEL 500 V - 0.095Щ - 29A TO-247 Група товару: Транзистори Од. вим: шт
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Technische Details STW29NK50ZD STM

Description: MOSFET N-CH 500V 29A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.5V @ 150µA, Power Dissipation (Max): 350W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

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STW29NK50ZD STW29NK50ZD Hersteller : STMicroelectronics en.CD00003674.pdf Description: MOSFET N-CH 500V 29A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 150µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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STW29NK50ZD STW29NK50ZD Hersteller : STMicroelectronics stmicroelectronics_cd00003674-1205499.pdf MOSFETs N-CHANNEL MOSFET
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