STW31N65M5 STMicroelectronics
auf Bestellung 594 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.64 EUR |
| 10+ | 6.35 EUR |
| 25+ | 5.37 EUR |
| 100+ | 4.59 EUR |
| 250+ | 4.10 EUR |
| 600+ | 3.52 EUR |
| 1200+ | 3.22 EUR |
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Technische Details STW31N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 22A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V.
Weitere Produktangebote STW31N65M5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STW31N65M5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW31N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW31N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW31N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.9A Power dissipation: 150W Case: TO247 Gate-source voltage: ±25V On-state resistance: 148mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW31N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 22A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW31N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.9A Power dissipation: 150W Case: TO247 Gate-source voltage: ±25V On-state resistance: 148mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |