
STW32NM50N STMicroelectronics
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 12.53 EUR |
10+ | 12.50 EUR |
25+ | 7.34 EUR |
100+ | 6.18 EUR |
250+ | 5.65 EUR |
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Technische Details STW32NM50N STMicroelectronics
Description: MOSFET N CH 500V 22A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V.
Weitere Produktangebote STW32NM50N nach Preis ab 5.46 EUR bis 12.90 EUR
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STW32NM50N | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V |
auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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STW32NM50N | Hersteller : STMicroelectronics |
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STW32NM50N | Hersteller : STMicroelectronics |
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STW32NM50N | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.1Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW32NM50N | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.1Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |