Technische Details STW32NM50N STMicroelectronics
Description: MOSFET N CH 500V 22A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V.
Weitere Produktangebote STW32NM50N nach Preis ab 5.71 EUR bis 13.59 EUR
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STW32NM50N | STMicroelectronics |
 Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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STW32NM50N | STMicroelectronics |
Description: MOSFET N CH 500V 22A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V |
auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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| STW32NM50N |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 1100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 600+ | 5.71 EUR |
| STW32NM50N |
|
Hersteller: STMicroelectronics
Description: MOSFET N CH 500V 22A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
Description: MOSFET N CH 500V 22A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.59 EUR |
| 30+ | 7.83 EUR |
| 120+ | 6.99 EUR |