STW33N60DM2 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15.5A
Pulsed drain current: 96A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.42 EUR |
| 13+ | 5.75 EUR |
| 14+ | 5.43 EUR |
| 100+ | 5.31 EUR |
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Technische Details STW33N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 24A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V.
Weitere Produktangebote STW33N60DM2 nach Preis ab 5.43 EUR bis 13.73 EUR
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STW33N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15.5A; Idm: 96A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15.5A Pulsed drain current: 96A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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STW33N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 24A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 100 V |
auf Bestellung 513 Stücke: Lieferzeit 21-28 Tag (e) |
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STW33N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW33N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 24A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW33N60DM2 | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V, 0.110 Ohm typ 24 A MDmesh DM2 Power MOSFET in TO-247 package |
Produkt ist nicht verfügbar |