Technische Details STW34NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 29A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V.
Weitere Produktangebote STW34NM60ND nach Preis ab 8.63 EUR bis 21.8 EUR
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STW34NM60ND | STMicroelectronics |
 Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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STW34NM60ND | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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STW34NM60ND | STMicroelectronics |
Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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STW34NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 29A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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STW34NM60ND | STMicroelectronics |
MOSFETs N-Ch 600V 0.097 Ohm 29A FDmesh II FD |
auf Bestellung 498 Stücke: Lieferzeit 10-14 Tag (e) |
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STW34NM60ND | STMicroelectronics |
Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 80 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STW34NM60ND |
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Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 80+ | 9.66 EUR |
| STW34NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.7 EUR |
| 10+ | 8.63 EUR |
| STW34NM60ND |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 600+ | 9.91 EUR |
| STW34NM60ND |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Description: MOSFET N-CH 600V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.72 EUR |
| STW34NM60ND |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 600V 0.097 Ohm 29A FDmesh II FD
MOSFETs N-Ch 600V 0.097 Ohm 29A FDmesh II FD
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.8 EUR |
| 10+ | 13.04 EUR |
| 100+ | 11.13 EUR |
| STW34NM60ND |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH Si 600V 29A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)