STW35N65DM2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.56 EUR |
| 10+ | 6.85 EUR |
| 100+ | 4.96 EUR |
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Technische Details STW35N65DM2 STMicroelectronics
Description: MOSFET N-CH 650V 32A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V.
Weitere Produktangebote STW35N65DM2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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STW35N65DM2 | Hersteller : STMicroelectronics |
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| STW35N65DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-247 Tube |
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| STW35N65DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 90A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 93mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 250W Gate charge: 56.3nC Gate-source voltage: ±25V Pulsed drain current: 90A Drain current: 20A Anzahl je Verpackung: 1 Stücke |
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| STW35N65DM2 | Hersteller : STMicroelectronics |
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| STW35N65DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 90A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 93mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 250W Gate charge: 56.3nC Gate-source voltage: ±25V Pulsed drain current: 90A Drain current: 20A |
Produkt ist nicht verfügbar |