STW35N65DM2 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 650 V, 93 mOhm typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.01 EUR |
| 10+ | 6.44 EUR |
| 100+ | 4.66 EUR |
| 600+ | 3.96 EUR |
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Technische Details STW35N65DM2 STMicroelectronics
Description: MOSFET N-CH 650V 32A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V.
Weitere Produktangebote STW35N65DM2 nach Preis ab 4.39 EUR bis 9.08 EUR
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STW35N65DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 32A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V |
auf Bestellung 449 Stücke: Lieferzeit 10-14 Tag (e) |
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STW35N65DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW35N65DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW35N65DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 90A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 90A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56.3nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |