STW36N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
Description: MOSFET N-CHANNEL 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
auf Bestellung 596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.93 EUR |
30+ | 7.87 EUR |
120+ | 6.74 EUR |
510+ | 5.99 EUR |
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Technische Details STW36N60M6 STMicroelectronics
Description: MOSFET N-CHANNEL 600V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V.
Weitere Produktangebote STW36N60M6 nach Preis ab 5.1 EUR bis 10.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STW36N60M6 | Hersteller : STMicroelectronics | MOSFETs N-channel 600 V, 85 mOhm typ 30 A MDmesh M6 Power MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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STW36N60M6 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW36N60M6 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW36N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 102A Power dissipation: 208W Case: TO247 Gate-source voltage: ±25V On-state resistance: 99mΩ Mounting: THT Gate charge: 44.3nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW36N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 102A Power dissipation: 208W Case: TO247 Gate-source voltage: ±25V On-state resistance: 99mΩ Mounting: THT Gate charge: 44.3nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |