STW36N60M6

STW36N60M6 STMicroelectronics


STP36N60M6%2C_STW36N60M6_Web.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V
auf Bestellung 596 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.93 EUR
30+ 7.87 EUR
120+ 6.74 EUR
510+ 5.99 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details STW36N60M6 STMicroelectronics

Description: MOSFET N-CHANNEL 600V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 100 V.

Weitere Produktangebote STW36N60M6 nach Preis ab 5.1 EUR bis 10.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STW36N60M6 STW36N60M6 Hersteller : STMicroelectronics stp36n60m6-1851508.pdf MOSFETs N-channel 600 V, 85 mOhm typ 30 A MDmesh M6 Power MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.26 EUR
10+ 10.03 EUR
25+ 8.13 EUR
100+ 6.97 EUR
250+ 6.21 EUR
600+ 5.44 EUR
1200+ 5.1 EUR
STW36N60M6 STW36N60M6 Hersteller : STMicroelectronics stw36n60m6.pdf Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
STW36N60M6 Hersteller : STMicroelectronics stw36n60m6.pdf Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
STW36N60M6 STW36N60M6 Hersteller : STMicroelectronics stw36n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 102A
Power dissipation: 208W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STW36N60M6 STW36N60M6 Hersteller : STMicroelectronics stw36n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 19A; Idm: 102A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 102A
Power dissipation: 208W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 44.3nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar