STW38N65M5-4 STMicroelectronics
auf Bestellung 525 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.60 EUR |
| 10+ | 10.81 EUR |
| 25+ | 7.88 EUR |
| 250+ | 7.87 EUR |
| 600+ | 7.11 EUR |
| 1200+ | 6.81 EUR |
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Technische Details STW38N65M5-4 STMicroelectronics
Description: MOSFET N-CH 650V 30A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V.
Weitere Produktangebote STW38N65M5-4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| STW38N65M5-4 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 30A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW38N65M5-4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 30A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW38N65M5-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 120A Power dissipation: 190W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW38N65M5-4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 30A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STW38N65M5-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 19A; Idm: 120A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 120A Power dissipation: 190W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |