STW3N150 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Power dissipation: 140W
Polarisation: unipolar
Technology: PowerMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Drain current: 1.6A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Case: TO247
Mounting: THT
Kind of package: tube
Power dissipation: 140W
Polarisation: unipolar
Technology: PowerMesh™
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 1.5kV
Drain current: 1.6A
On-state resistance: 9Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.13 EUR |
13+ | 5.52 EUR |
17+ | 4.23 EUR |
18+ | 4 EUR |
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Technische Details STW3N150 STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1500 V, Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V.
Weitere Produktangebote STW3N150 nach Preis ab 4 EUR bis 10.56 EUR
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STW3N150 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247 Case: TO247 Mounting: THT Kind of package: tube Power dissipation: 140W Polarisation: unipolar Technology: PowerMesh™ Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 1.5kV Drain current: 1.6A On-state resistance: 9Ω Type of transistor: N-MOSFET |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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STW3N150 | Hersteller : STMicroelectronics | MOSFET 1500V 6Ohm 2.5A N-Channel |
auf Bestellung 2378 Stücke: Lieferzeit 14-28 Tag (e) |
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STW3N150 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 1571 Stücke: Lieferzeit 14-21 Tag (e) |
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STW3N150 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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STW3N150 Produktcode: 194243 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STW3N150 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW3N150 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1500V 2.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V |
Produkt ist nicht verfügbar |