STW3N170 STMicroelectronics
Hersteller: STMicroelectronicsMOSFET N-channel 1700 V, 7 Ohm typ 2.6 A, PowerMESH Power MOSFET in TO-247 package
auf Bestellung 545 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 14.12 EUR |
| 10+ | 11.86 EUR |
| 25+ | 11.21 EUR |
| 100+ | 9.59 EUR |
| 250+ | 8.61 EUR |
| 600+ | 7.25 EUR |
| 1200+ | 6.86 EUR |
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Technische Details STW3N170 STMicroelectronics
Description: MOSFET N-CH 1700V 2.6A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V, Power Dissipation (Max): 160mW, Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Weitere Produktangebote STW3N170
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STW3N170 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1700V; 1.6A; Idm: 10.4A; 0.16W Mounting: THT Case: TO247 Kind of package: tube Pulsed drain current: 10.4A Power dissipation: 0.16W Polarisation: unipolar Technology: PowerMesh™ Drain current: 1.6A Kind of channel: enhanced Drain-source voltage: 1.7kV Type of transistor: N-MOSFET On-state resistance: 13Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW3N170 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.7KV 2.3A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW3N170 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.7KV 2.3A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW3N170 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.7KV 2.3A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW3N170 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1700V 2.6A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V Power Dissipation (Max): 160mW Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STW3N170 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1700V; 1.6A; Idm: 10.4A; 0.16W Mounting: THT Case: TO247 Kind of package: tube Pulsed drain current: 10.4A Power dissipation: 0.16W Polarisation: unipolar Technology: PowerMesh™ Drain current: 1.6A Kind of channel: enhanced Drain-source voltage: 1.7kV Type of transistor: N-MOSFET On-state resistance: 13Ω Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |