STW3N170 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 1700V 2.6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 2+ | 9.01 EUR |
| 30+ | 4.43 EUR |
| 120+ | 3.96 EUR |
| 510+ | 3.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STW3N170 STMicroelectronics
Description: MOSFET N-CH 1700V 2.6A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V, Power Dissipation (Max): 160W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Weitere Produktangebote STW3N170 nach Preis ab 4.59 EUR bis 11.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STW3N170 | Hersteller : STMicroelectronics |
MOSFETs N-channel 1700 V, 7 Ohm typ 2.6 A, PowerMESH Power MOSFET in TO-247 package |
auf Bestellung 334 Stücke: Lieferzeit 10-14 Tag (e) |
|