STW40N65M2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 32A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V
auf Bestellung 307 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 13.94 EUR |
| 30+ | 11.03 EUR |
| 120+ | 9.45 EUR |
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Technische Details STW40N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 32A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 16A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2355 pF @ 100 V.
Weitere Produktangebote STW40N65M2 nach Preis ab 6.81 EUR bis 14.01 EUR
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STW40N65M2 | Hersteller : STMicroelectronics |
MOSFET N-channel 650 V, 0.087 Ohm typ 32 A MDmesh M2 Power MOSFET in TO-220 package |
auf Bestellung 1552 Stücke: Lieferzeit 14-28 Tag (e) |
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STW40N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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| STW40N65M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW40N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 128A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 87mΩ Mounting: THT Gate charge: 56.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STW40N65M2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 128A; 250W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 128A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 87mΩ Mounting: THT Gate charge: 56.5nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |