STW40N90K5 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A
Mounting: THT
Case: TO247
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Technology: MDmesh™ K5
Power dissipation: 446W
Pulsed drain current: 160A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 25A
On-state resistance: 99mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A
Mounting: THT
Case: TO247
Kind of package: tube
Features of semiconductor devices: ESD protected gate
Polarisation: unipolar
Kind of channel: enhanced
Technology: MDmesh™ K5
Power dissipation: 446W
Pulsed drain current: 160A
Gate-source voltage: ±30V
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 25A
On-state resistance: 99mΩ
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 16.5 EUR |
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Technische Details STW40N90K5 STMicroelectronics
Description: MOSFET N-CH 900V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 100 V.
Weitere Produktangebote STW40N90K5 nach Preis ab 16.5 EUR bis 48.93 EUR
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STW40N90K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 25A; Idm: 160A Mounting: THT Case: TO247 Kind of package: tube Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced Technology: MDmesh™ K5 Power dissipation: 446W Pulsed drain current: 160A Gate-source voltage: ±30V Type of transistor: N-MOSFET Drain-source voltage: 900V Drain current: 25A On-state resistance: 99mΩ |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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STW40N90K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 20A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 100 V |
auf Bestellung 574 Stücke: Lieferzeit 21-28 Tag (e) |
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STW40N90K5 | Hersteller : STMicroelectronics | MOSFET N-channel 900 V, 0.088 Ohm typ 40 A MDmesh K5 Power MOSFET |
auf Bestellung 600 Stücke: Lieferzeit 391-405 Tag (e) |
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STW40N90K5 Produktcode: 158568 |
Transistoren > MOSFET N-CH |
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