STW42N65M5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
auf Bestellung 557 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 25.38 EUR |
| 30+ | 20.26 EUR |
| 120+ | 18.13 EUR |
| 510+ | 16 EUR |
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Technische Details STW42N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 33A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V.
Weitere Produktangebote STW42N65M5 nach Preis ab 14.35 EUR bis 25.53 EUR
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STW42N65M5 | Hersteller : STMicroelectronics |
MOSFET N-Ch 650 Volt 33 Amp |
auf Bestellung 1113 Stücke: Lieferzeit 14-28 Tag (e) |
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STW42N65M5 Produktcode: 49703 |
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STW42N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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STW42N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-247 Tube |
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STW42N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW42N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW42N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 20.8A; 190W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.8A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |