STW43N60DM2

STW43N60DM2 STMicroelectronics


STW43N60DM2.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
auf Bestellung 600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.73 EUR
30+5.31 EUR
120+5.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STW43N60DM2 STMicroelectronics

Description: MOSFET N-CH 600V 34A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V.

Weitere Produktangebote STW43N60DM2 nach Preis ab 5.86 EUR bis 9.42 EUR

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STW43N60DM2 STW43N60DM2 Hersteller : STMicroelectronics STW43N60DM2.pdf MOSFETs N-channel 600 V, 0.085 Ohm typ 34 A MDmesh DM2 Power MOSFET in TO-247 package
auf Bestellung 1808 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.42 EUR
25+5.86 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STW43N60DM2 STW43N60DM2 Hersteller : STMicroelectronics 779dm00207716.pdf Trans MOSFET N-CH 600V 34A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 746 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
STW43N60DM2 Hersteller : STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5D481FEC0D2&compId=stw43n60dm2.pdf?ci_sign=67af73fb2a420579a9a2844c36e5eff1eb19d32b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW43N60DM2 Hersteller : STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B5D481FEC0D2&compId=stw43n60dm2.pdf?ci_sign=67af73fb2a420579a9a2844c36e5eff1eb19d32b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 21A; Idm: 136A; 250W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH