STW45N60DM2AG STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 8.08 EUR |
| 12+ | 6.19 EUR |
| 13+ | 5.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STW45N60DM2AG STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STW45N60DM2AG nach Preis ab 5.85 EUR bis 15.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STW45N60DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 85mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
STW45N60DM2AG | Hersteller : STMicroelectronics |
MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ 34 A MDmesh DM2 Power MOSFET |
auf Bestellung 600 Stücke: Lieferzeit 140-154 Tag (e) |
|
||||||||||||||||
 |
STW45N60DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 34A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
| STW45N60DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 34A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
 |
STW45N60DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 34A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |