STW45N60DM2AG STMicroelectronics
                                                Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 11+ | 7.09 EUR | 
| 13+ | 5.69 EUR | 
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Technische Details STW45N60DM2AG STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V, Qualification: AEC-Q101. 
Weitere Produktangebote STW45N60DM2AG nach Preis ab 5.19 EUR bis 10.65 EUR
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        STW45N60DM2AG | Hersteller : STMicroelectronics | 
            
                         Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 85mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke  | 
        
                             auf Bestellung 28 Stücke: Lieferzeit 7-14 Tag (e) | 
        
            
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        STW45N60DM2AG | Hersteller : STMicroelectronics | 
            
                         MOSFETs Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i         | 
        
                             auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) | 
        
            
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        STW45N60DM2AG | Hersteller : STMicroelectronics | 
            
                         Trans MOSFET N-CH 600V 34A Automotive 3-Pin(3+Tab) TO-247 Tube         | 
        
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        STW45N60DM2AG | Hersteller : STMicroelectronics | 
            
                         Trans MOSFET N-CH 600V 34A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube         | 
        
                             Produkt ist nicht verfügbar                      | 
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| STW45N60DM2AG | Hersteller : STMicroelectronics | 
            
                         Trans MOSFET N-CH 600V 34A Automotive 3-Pin(3+Tab) TO-247 Tube         | 
        
                             Produkt ist nicht verfügbar                      | 
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                      | 
        STW45N60DM2AG | Hersteller : STMicroelectronics | 
            
                         Description: MOSFET N-CH 600V 34A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Qualification: AEC-Q101  | 
        
                             Produkt ist nicht verfügbar                      | 
        


