STW45N60DM2AG STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.43 EUR |
| 10+ | 8.88 EUR |
| 100+ | 7.6 EUR |
| 600+ | 6.45 EUR |
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Technische Details STW45N60DM2AG STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote STW45N60DM2AG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STW45N60DM2AG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247 Mounting: THT Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±25V Kind of package: tube Case: TO247 On-state resistance: 85mΩ Power dissipation: 250W Polarisation: unipolar Technology: MDmesh™ DM2 Drain current: 21A |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STW45N60DM2AG |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 85mΩ
Power dissipation: 250W
Polarisation: unipolar
Technology: MDmesh™ DM2
Drain current: 21A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; 250W; TO247
Mounting: THT
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Kind of package: tube
Case: TO247
On-state resistance: 85mΩ
Power dissipation: 250W
Polarisation: unipolar
Technology: MDmesh™ DM2
Drain current: 21A
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)


