Weitere Produktangebote STW45N60DM6 nach Preis ab 5.72 EUR bis 12.5 EUR
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STW45N60DM6 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 30A TO247Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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STW45N60DM6 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 packag |
auf Bestellung 377 Stücke: Lieferzeit 10-14 Tag (e) |
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STW45N60DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 19A; Idm: 95A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 95A Power dissipation: 210W Case: TO247 Gate-source voltage: ±25V On-state resistance: 99mΩ Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
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